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Journal of Materials Chemistry

Volumn 22, Issue 17, 2012, Pages 8420-8425

Highly sensitive metal-insulator-semiconductor UV photodetectors based on ZnO/SiO 2 core-shell nanowires

(5) Afsal, Manekkathodi a Wang, Chiu Yen a Chu, Li Wei a Ouyang, Hao a Chen, Lih Juann a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CORE-SHELL NANOWIRES; CURRENT RATIOS; DARK CURRENT RATIO; DEVICE DESIGN; DEVICE STRUCTURES; ELECTRON HOLE PAIRS; ELECTRON HOPPING; ELECTRON-HOLE GENERATION; HIGHLY SENSITIVE; HIGHLY SENSITIVE PHOTODETECTORS; INSULATING LAYERS; LOW COST FABRICATION; MATERIAL SYNTHESIS; METAL-INSULATOR-SEMICONDUCTORS; MULTIPLE DEFECTS; OPTICAL EMISSIONS; PHOTOCONDUCTIVE SEMICONDUCTORS; PHOTORESPONSES; UV PHOTODETECTORS; ZNO;

MIS DEVICES; NANOWIRES; PHOTOCONDUCTIVITY; PHOTODETECTORS; ZINC OXIDE;

SHELLS (STRUCTURES);

EID: 84859739787 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm30514c Document Type: Article

Times cited : (52)

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