Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: A confined water effect?

Nanotechnology

Volumn 23, Issue 17, 2012, Pages

  Oliveira, C K ^a   Matos, M J S ^a   Mazzoni, M S C ^a   Chacham, H ^a   Neves, B R A ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ANOMALOUS BEHAVIOR; ANOMALOUS RESPONSE; BIAS POLARITY; COMPARATIVE ANALYSIS; CONFINED WATER; DC ELECTRIC FIELD; DIELECTRIC RESPONSE; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); NEGATIVE BIAS; NON-POLAR; POSITIVE BIAS; SI OXIDE; WATER LAYERS;

ELECTRIC FIELDS; SILICON;

BORON NITRIDE;

EID: 84859597612     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/17/175703     Document Type: Article

References (22)

1. Novoselov K S, Geim A K, Morozov S V, Jiang D, Katnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2004 Electric field effect in atomically thin carbon films Science 306 6669 (Pubitemid 39440910)
2. Song L et al 2010 Large scale growth and characterization of atomic hexagonal boron nitride layers Nano Lett. 10 320915
3. Dean C R et al 2010 Boron nitride substrates for high-quality graphene electronics Nature Nanotechnol. 5 7226
4. Bonnell D A 2001 Scanning Probe Microscopy and Spectroscopy (New York: WileyVCH) p 207
5. Barth C, Foster A S, Henry C R and Shluger A L 2011 Recent trends in surface characterization and chemistry with high-resolution scanning force methods Adv. Mater. 23 477501
6. Barboza A P M, Gomes A P, Chacham H and Neves B R A 2010 Probing electric characteristics and sorting out metallic from semiconducting carbon nanotubes Carbon 48 328792
7. Barboza A P M, Guimaraes M H D, Massote D V P, Campos L C, Barbosa Neto N M, Cancado L G, Lacerda R G, Chacham H, Mazzoni M S C and Neves B R A 2011 Room-temperature compression-induced diamondization of few-layer graphene Adv. Mater. 23 30147
8. Gorbachev R V et al 2011 Hunting for monolayer boron nitride: optical and Raman signatures Small 7 4658
9. Luna M, Rieutord F, Melman N A, Dai Q and Salmeron M 1998 Adsorption of water on alkali halide surfaces studied by scanning polarization force microscopy J. Phys. Chem. A 102 6793800 (Pubitemid 128604939)
10. Hudlet S, Saint Jean M, Guthmann C and Berger J 1998 Evaluation of the capacitive force between an atomic force microscopy tip and a metallic surface Eur. Phys. J. B 2 510 (Pubitemid 128437420)
11. Datta S S, Strachan D R, Mele E J and Johnson A T C 2009 Surface potentials and layer charge distributions in few-layer graphene films Nano Lett. 9 711
12. Kim W, Javey A, Vermesh O, Wang Q, Li Y and Dai H 2003 Hysteresis caused by water molecules in carbon nanotube field-effect transistors Nano Lett. 3 1938 (Pubitemid 37130535)
13. 2 Phys. Rev. B 78 115404
14. Ziegler D, Gava P, Gttinger J, Molitor F, Wirtz L, Lazzeri M, Saitta A M, Stemmer A, Mauri F and Stampfer C 2011 Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory Phys. Rev. B 83 235434
15. Geick R, Perry C H and Rupprecht G 1966 Normal modes in hexagonal boron nitride Phys. Rev. 146 543
16. Troullier N and Martins J L 1991 Efficient pseudopotentials for plane-wave calculations Phys. Rev. B 43 19932006
17. Kohn W and Sham L J 1965 Self-consistent equations including exchange and correlation effects Phys. Rev. 140 A1133
18. Soler J M, Artacho E, Gale J D, Garcia A, Junquera J, Ordejon P and Sanchez-Portal D 2002 The SIESTA method for ab initio order-N materials simulation J. Phys.: Condens. Matter 14 274579 (Pubitemid 34288362)
19. Nosé A 1984 Unified formulation of the constant temperature molecular dynamics methods J. Chem. Phys. 81 511
20. 2 Phys. Rev. Lett. 106 106801
21. Silva-Pinto E and Neves B R A 2005 Electro-mechanical patterning of self-assembled monolayers on insulating substrates Nanotechnology 16 2923
22. 2 surface Appl. Phys. Lett. 93 163108