Precise control of single- and bi-layer graphene growths on epitaxial Ni(111) thin film

Journal of Applied Physics

Volumn 111, Issue 6, 2012, Pages

  Entani, Shiro ^a   Matsumoto, Yoshihiro ^a   Ohtomo, Manabu ^a   Avramov, Pavel V ^a   Naramoto, Hiroshi ^a   Sakai, Seiji ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BENZENE EXPOSURES; BENZENE VAPORS; BI-LAYER; ELECTRICAL UNIFORMITY; ELECTRON ENERGY LOSS; EXPOSURE CONDITIONS; GRAPHENE GROWTH; IN-SITU ANALYSIS; INTERFACE INTERACTION; LANGMUIRS; MICRO-RAMAN ANALYSIS; PRECISE CONTROL; SECOND LAYER; SINGLE LAYER; THREE ORDERS OF MAGNITUDE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

BENZENE; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; SILICON COMPOUNDS; THIN FILMS; VAPORS;

GRAPHENE;

EID: 84859531887     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694662     Document Type: Article

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