Impact electrical property of alkali metal doped ZnO

Advanced Materials Research

Volumn 468-471, Issue , 2012, Pages 1501-1507

  Tan, Honglin ^a   Jia, Congying ^a   Xiang, Chao ^a   Yang, Yingxiang ^a  

^a KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Alkali metal ion doped ZnO; Band structure; Density of sates (DOS); First principles

Indexed keywords

ACCEPTOR LEVELS; DENSITY FUNCTIONAL THEORIES (DFT); DOPANT IONS; DOPED ZNO; FIRST-PRINCIPLES; INTERSTITIAL IMPURITIES; INTERSTITIAL SITES; IONIC RADIUS; METAL-DOPED; P TYPE ZNO; P-TYPE DOPANT; PLANE WAVE; ZNO CRYSTALS;

BAND STRUCTURE; CRYSTAL IMPURITIES; DENSITY FUNCTIONAL THEORY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; IONIC CONDUCTION IN SOLIDS; MANUFACTURE; METAL IONS; SEMICONDUCTOR DOPING; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84859228433     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.468-471.1501     Document Type: Conference Paper

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