Growth of carbon nanotubes on Si/SiO 2 wafer etched by hydrofluoric acid under different etching durations

Applied Surface Science

Volumn 258, Issue 15, 2012, Pages 5774-5777

  Tan, Lling Lling ^a   Chai, Siang Piao ^a   Mohamed, Abdul Rahman ^b  

^a MONASH UNIVERSITY MALAYSIA   (Malaysia)

^b SCHOOL OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

Carbon nanotubes; Chemical vapor deposition; Etching; Methane decomposition; Silicon wafer

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; ETCHING; HYDROFLUORIC ACID; METAL NANOPARTICLES; NANOCATALYSTS; SILICA NANOPARTICLES; SILICON OXIDES; SILICON WAFERS; YARN;

ETCHING PROCESS; GRAPHITIC STRUCTURES; LOW FREQUENCY RANGE; METAL-FREE CATALYSTS; METHANE DECOMPOSITION; RADIAL BREATHING MODE; RAMAN ANALYSIS; SIO2 NANOPARTICLES;

CARBON NANOTUBES;

EID: 84859158633     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.02.092     Document Type: Article

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