Theory and modeling of electrically tunable metamaterial devices using inter-subband transitions in semiconductor quantum wells

Optics Express

Volumn 20, Issue 6, 2012, Pages 6584-6597

  Gabbay, Alon ^a   Brener, Igal ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS;

ELECTRICAL BIAS; ELECTRICAL TUNING; ELECTRICALLY TUNABLE; FAR INFRARED; GAAS; INTERSUBBAND TRANSITIONS; PERMITTIVITY TENSORS; SEMICONDUCTOR HETEROSTRUCTURES; STRONG COUPLING; THEORY AND MODELING; THERMAL INFRARED; TUNING MECHANISM;

METAMATERIALS;

ARTICLE; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; LIGHT; MATERIALS; METHODOLOGY; QUANTUM THEORY; RADIATION SCATTERING; REFRACTOMETRY; SEMICONDUCTOR; THEORETICAL MODEL;

COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; MANUFACTURED MATERIALS; MODELS, THEORETICAL; QUANTUM THEORY; REFRACTOMETRY; SCATTERING, RADIATION; SEMICONDUCTORS;

EID: 84858964245     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.006584     Document Type: Article

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