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Volumn 9, Issue 3-4, 2012, Pages 1070-1073
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Initial experiments in the migration enhanced afterglow growth of gallium and indium nitride
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Author keywords
AFM; GaN; InN; Migration enhanced epitaxy; XRD
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Indexed keywords
AFM;
GAN;
INN;
MIGRATION ENHANCED EPITAXY;
XRD;
SURFACE ROUGHNESS;
X RAY DIFFRACTION;
GALLIUM NITRIDE;
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EID: 84858853389
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.201100209 Document Type: Article |
Times cited : (11)
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References (0)
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