Highly n-type doped InGaN films for efficient direct solar hydrogen generation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 964-967

  Mauder, C ^a   Tuna, Ö ^b   Gutrath, B ^a   Balmes, V ^a   Behmenburg, H ^a   Rzheutskii, M V ^c   Lutsenko, E V ^c   Yablonskii, G P ^c   Noyong, M ^a   Simon, U ^a   Heuken, M ^a,b   Kalisch, H ^a   Vescan, A ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

^c B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

InGaN; MOVPE; Photoelectrolysis; Solar water; Splitting

Indexed keywords

APPLIED VOLTAGES; BAND-GAP VALUES; BI-LAYER; COUNTER ELECTRODES; DIRECT SOLAR; ELECTRON CONCENTRATION; EMISSION PEAKS; EXTERNAL VOLTAGES; HELMHOLTZ; HYDROGEN BUBBLES; INGAN; METAL-ORGANIC VAPOUR PHASE EPITAXY; NAOH ELECTROLYTE; PHOTOELECTROLYSIS; PHOTOLUMINESCENCE SPECTRUM; ROOM TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS; SEMI-CONDUCTOR SURFACES; SPACE CHARGE REGIONS; SPLITTING; STRUCTURAL QUALITIES; TRANSMISSION DATA; XE LAMP;

CONVERSION EFFICIENCY; HYDROGEN; HYDROGEN PRODUCTION; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PHOTOEXCITATION; PLATINUM; SEMICONDUCTOR QUANTUM WELLS; THICK FILMS;

GALLIUM COMPOUNDS;

EID: 84858853111     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100400     Document Type: Article

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