High sensitivity detector with robust PVT performance for 60GHz BiST phased array systems in 90nm CMOS

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2012 - Digest of Papers

Volumn , Issue , 2012, Pages 211-214

  Cohen, Emanuel ^a,b   Israel, Amichay ^a   Degani, Ofir ^a   Ritter, Dan ^b  

^a INTEL CORPORATION   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; BIAS CIRCUITS; DYNAMIC RANGE; HIGH SENSITIVITY; HIGH-SENSITIVITY DETECTORS; LOW NOISE; PHASED ARRAY SYSTEMS; PROCESS VARIATION; SELF-MIXING;

MONOLITHIC INTEGRATED CIRCUITS; SILICON DETECTORS;

DETECTORS;

EID: 84858727503     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SiRF.2012.6160149     Document Type: Conference Paper

References (6)

1. Cohen E. et. al. "A thirty two element phased-array transceiver at 60GHz with RF-IF conversion block in 90nm flip chip CMOS process" - RFIC2010
2. Cohen E. et. al. "A bidirectional TX/RX four element phased-array at 60GHz with RF-IF conversion in 90nm CMOS" - RFIC2009
3. Reynolds, S.K. et. al. " A 16-element phased-array receiver IC for 60-GHz communications in SiGe BiCMOS" - RFIC2010
4. Sleiman S. et al "Millimeter-Wave BiST and BiSC using a High - Definition Sub-Ranged Detector in 90nm CMOS"-MWSCAS, 2010
5. Gorisse J. et al "A 60GHz CMOS RMS Power Detector for Antenna Impedance Mismatch Detection" -ESSCIRC, 2009.
6. U. R. Pfeiffer et al "A 20dBm fully-integrated 60GHz SiGe power amplifier with automatic level control", JSSC, July 2007.