A graphite-like zero gap semiconductor with an interlayer separation of 2.8 Å

Advanced Materials

Volumn 24, Issue 12, 2012, Pages 1589-1593

  Baskey, Moni ^a   Saha, Shyamal K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

graphene; multilayered structure; re stacking; semiconductors; zero gap

Indexed keywords

CRYSTAL PHASE; ELECTRICAL DATA; INTERLAYER SEPARATION; MULTI-LAYERED STRUCTURE; RE-STACKING; ZERO GAP;

GRAPHENE; GRAPHITE; SEMICONDUCTOR MATERIALS;

SEPARATION;

GLASS; GRAPHITE; OXYGEN;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; SEMICONDUCTOR;

GLASS; GRAPHITE; MODELS, MOLECULAR; MOLECULAR CONFORMATION; OXYGEN; SEMICONDUCTORS;

EID: 84858393477     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201104717     Document Type: Article

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