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Materials Transactions

Volumn 53, Issue 2, 2012, Pages 453-456

Reliability enhancement of thick AlCu wire bonds in IGBT modules using Al 2Cu precipitates

(6) Kurosu, Toshiki a,b Khoo, Khyoupin b Nakamura, Yoshihide b Ozaki, Keisuke b Ishikawa, Nobuhiro c Onuki, Jin b

a HITACHI LTD (Japan)

b IBARAKI UNIVERSITY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Al 2Cu precipitates; Electric cars; Insulated gate bipolar transistor (IGBT) module; Reliability; Thick aluminum wire bonds aluminum 0.5 mass copper wire

Indexed keywords

CU PRECIPITATES; ELECTRIC CARS; HIGH OPERATING TEMPERATURE; INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MODULE; INSULATED GATE BIPOLAR TRANSISTOR MODULES; MOTOR VEHICLE; RELIABILITY ENHANCEMENT; SI SUBSTRATES; TEMPERATURE CHANGES; THERMAL CYCLE TESTS; THERMAL EXPANSION MISMATCH; THICK ALUMINUM WIRE BONDS ALUMINUM-0.5 MASS% COPPER WIRE; WIRE BONDS;

GRAIN BOUNDARIES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); RELIABILITY; WIRE;

ALUMINUM;

EID: 84858317794 PISSN: 13459678 EISSN: None Source Type: Journal
DOI: 10.2320/matertrans.M2011277 Document Type: Conference Paper

Times cited : (7)

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