Low-threshold 3 μm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous-wave up to 64 °C

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2011, Pages

  Vizbaras, Kristijonas ^a   Andrejew, Alexander ^a   Vizbaras, Augustinas ^a   Grasse, Christian ^a   Arafin, Shamsul ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION LINES; ACTIVE REGIONS; CONTINUOUS WAVES; CW OPERATION; GAINASSB; GASB-BASED LASERS; HIGH CHARACTERISTIC TEMPERATURE; LONG WAVELENGTH LASERS; LONG-WAVELENGTH-RANGE; LOW THRESHOLD CURRENT DENSITY; LOW THRESHOLDS; PULSED MODE; RESONATOR LENGTH; RIDGE WAVEGUIDE LASERS; SENSING APPLICATIONS; SPECTRAL RANGE; TEMPERATURE RANGE; THRESHOLD CURRENTS; TRACE-GAS SENSING; TUNABLE DIODE LASERS; WAVELENGTH RANGES;

CARBON DIOXIDE; CHARACTERIZATION; EXTRAPOLATION; HEAT SINKS; INDIUM PHOSPHIDE; LIGHT SOURCES; RIDGE WAVEGUIDES; SEMICONDUCTOR QUANTUM WELLS; SENSORS;

SEMICONDUCTOR LASERS;

EID: 84858206025     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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