Power amplification at 0.65 THz using InP HEMTs

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 3 PART 2, 2012, Pages 724-729

  Radisic, Vesna ^a   Leong, Kevin M K H ^a   Mei, Xiaobing ^a   Sarkozy, Stephen ^a   Yoshida, Wayne ^a   Deal, William R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

HEMT; millimeter wave; power amplifier; solid state power amplifier (SSPA); sub millimeter wave; terahertz monolithic integrated circuit (TMIC)

Indexed keywords

AMPLIFIER MODULES; BUILDING BLOCKES; DIRECT COUPLING; ELECTROMAGNETIC TRANSITIONS; INP; INP HEMT; OUTPUT POWER; OUTPUT STAGES; PEAK OUTPUT POWER; POWER AMPLIFICATION; SATURATED OUTPUT POWER; SMALL-SIGNAL GAIN; SOLID STATE POWER AMPLIFIER; SUBMILLIMETERS; TERA HERTZ; Y-JUNCTIONS;

MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; POWER AMPLIFIERS; WAVEGUIDES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84858153660     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2011.2176503     Document Type: Article

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