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Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

Influence of a depletion layer on localized surface waves in doped semiconductor nanostructures

(7) Vassant, S a,b Pardo, F a Bouchon, P c Hadar, R c Marquier, F b Greffet, J J b Pelouard, J L a

a UNIV PARIS SUD (France)

b UNIV PARIS SUD (France)

c ONERA (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION LAYER; ELECTROMAGNETIC RESPONSE; GAAS; GAAS SURFACES; GRATING WALLS; HIGH SENSITIVITY; REFLECTIVITY MEASUREMENTS; REFLECTIVITY SPECTRA; SEMICONDUCTOR NANOSTRUCTURES; SUB-WAVELENGTH; THEORETICAL MODELS; THIN WALLS;

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SURFACE WAVES;

REFLECTION;

EID: 84857990038 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3689747 Document Type: Article

Times cited : (6)

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