Lateral positioning of InGaAs quantum dots using a buried stressor

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Strittmatter, A ^a   Schliwa, A ^a   Schulze, J H ^a   Germann, T D ^a   Dreismann, A ^a   Hitzemann, O ^a   Stock, E ^a   Ostapenko, I A ^a   Rodt, S ^a   Unrau, W ^a   Pohl, U W ^a   Hoffmann, A ^a   Bimberg, D ^a   Haisler, V ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM UP APPROACH; CONTOUR SHAPE; GAAS(001); GROWTH SURFACES; INGAAS QUANTUM DOTS; LATERAL ALIGNMENT; OPTICAL CHARACTERIZATION; OPTICAL QUALITIES; PARTIAL OXIDATIONS; QD EMISSIONS; SPECTRAL DIFFUSION; STRAIN FIELDS; STRAINED-LAYER GROWTH; VERTICAL SEPARATION;

GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84857942663     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3691251     Document Type: Article

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