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Journal of Physics and Chemistry of Solids

Volumn 73, Issue 6, 2012, Pages 735-740

Synthesis and characterization of Cu 2ZnSnS 4 thin films by SILAR method

(6) Mali, Sawanta S a Shinde, Pravin S a Betty, Chirayath A b Bhosale, Popatrao N a Oh, Young Woo c Patil, Pramod S a

a SHIVAJI UNIVERSITY (India)

b BHABHA ATOMIC RESEARCH CENTRE (India)

c Kyungnam University (South Korea)

Author keywords

A. Semiconducting; B. Chemical synthesis; C. X ray diffraction; D. Electrochemical properties

Indexed keywords

A. SEMICONDUCTING; ABSORBER LAYERS; ABSORPTION COEFFICIENTS; B. CHEMICAL SYNTHESIS; COATED GLASS SUBSTRATES; DIRECT BAND GAP; FILL FACTOR; FLUORINE DOPED TIN OXIDE; PHOTOELECTROCHEMICAL CONVERSION; PHOTOVOLTAIC INDUSTRY; SILAR METHOD; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS;

ADSORPTION; ELECTRIC PROPERTIES; FLUORINE; OPEN CIRCUIT VOLTAGE; SUBSTRATES; SYNTHESIS (CHEMICAL); THIN FILMS; TIN; TIN OXIDES; X RAY DIFFRACTION;

NANOSTRUCTURED MATERIALS;

EID: 84857920201 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2012.01.008 Document Type: Article

Times cited : (125)

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