All semiconductor high power fs laser system with variable repetition rate

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8277, Issue , 2012, Pages

  Balzer, J C ^a   Schlauch, T ^a   Klehr, A ^b   Erbert, G ^b   Hofmann, M R ^a  

^a Building IC 6/133 ^*  (Germany)

^b LEIBNIZ INSTITUT IM FORSCHUNGSVERBUND BERLIN E V   (Germany)

Author keywords

Modelocked laser; Semiconductor laser

Indexed keywords

CENTRAL WAVELENGTH; COST EFFECTIVE; ELECTRICALLY PUMPED; EMISSION WAVELENGTH; EXTERNAL CAVITY; EXTERNAL CAVITY LASERS; FLUORESCENCE LIFETIME IMAGING; FS LASER; HIGH PEAK POWER; HIGH-POWER; IMAGINARY PARTS; INTRA-CAVITY DISPERSION; LASER MATERIALS; MASTER OSCILLATOR POWER AMPLIFIERS; MATERIAL PROCESSING; MODE-LOCKED LASER; PEAK POWER; PULSE COMPRESSORS; PULSE DURATIONS; REPETITION RATE; SEMICONDUCTOR PULSE; SPECTRAL RANGE; STRONG COUPLING; TIME-DOMAIN TERAHERTZ SPECTROSCOPY; ULTRA-FAST; UNIQUE FEATURES;

LIGHT SOURCES; SEMICONDUCTOR LASERS; TIME DOMAIN ANALYSIS; ULTRASHORT PULSES;

PULSE GENERATORS;

EID: 84857482091     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.907953     Document Type: Conference Paper

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