Room-temperature 3.73 νm GaSb-based type-I quantum-well lasers with quinternary barriers

Semiconductor Science and Technology

Volumn 27, Issue 3, 2012, Pages

  Vizbaras, Kristijonas ^a   Amann, Markus Christian ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC TEMPERATURE; EMISSION WAVELENGTH; HOLE CONFINEMENT; LOSS MECHANISMS; OPERATING TEMPERATURE; PULSED OPERATION; RIDGE-WAVEGUIDE DEVICES; ROOM TEMPERATURE; ROOM-TEMPERATURE OPERATION; STRIPE WIDTH; TRANSPARENCY THRESHOLDS; TYPE-I LASERS;

QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM ALLOYS;

EID: 84857382205     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/3/032001     Document Type: Article

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