Investigation of electrically active defects in n-CdS/p-CdTe solar cells

ECS Transactions

Volumn 41, Issue 4, 2011, Pages 233-240

  Kharangarh, P ^a   Misra, D ^b   Georgiou, G E ^a   Chin, K K ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CADMIUM SULFIDE; CADMIUM SULFIDE SOLAR CELLS; CADMIUM TELLURIDE; CAPACITANCE; ENERGY GAP; II-VI SEMICONDUCTORS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION;

CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER TRANSPORT MECHANISMS; ELECTRICALLY ACTIVE DEFECTS; ILLUMINATION INTENSITY; METAL-SEMICONDUCTOR JUNCTIONS; SOLAR CELL PERFORMANCE; TEMPERATURE DEPENDENCE; TRAP ASSISTED TUNNELING;

SEMICONDUCTOR JUNCTIONS;

EID: 84857257429     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3628630     Document Type: Conference Paper

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