Photovoltaic response of carbon nanotube-silicon heterojunctions: Effect of nanotube film thickness and number of walls

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 10, 2011, Pages 9202-9207

  Castrucci, P ^a   Del Gobbo, S ^a   Camilli, L ^a   Scarselli, M ^a   Casciardi, S ^b   Tombolini, F ^b   Convertino, A ^c   Fortunato, G ^c   De Crescenzi, M ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b ISPESL   (Italy)

^c CNR   (Italy)

Author keywords

Carbon Nanotubes; Photovoltaic Device

Indexed keywords

ACETYLENE GAS; CHEMICAL VAPOUR DEPOSITION; CRYSTALLINE SILICON SUBSTRATES; ELECTRON HOLE; FUNDAMENTAL PARAMETERS; HIGH DENSITY; NANOTUBE FILMS; NANOTUBE WALLS; OUTER DIAMETERS; PHOTOGENERATION; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC RESPONSE; ROOM TEMPERATURE; SCHOTTKY JUNCTIONS; SILICON SUBSTRATES; THIN FILM SOLAR CELLS; ULTRA-HIGH VACUUM CHAMBER;

ACETYLENE; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; FILM THICKNESS; HETEROJUNCTIONS; MULTIWALLED CARBON NANOTUBES (MWCN); SILICON; THIN FILMS;

PHOTOVOLTAIC EFFECTS;

EID: 84857187523     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.4284     Document Type: Conference Paper

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