Influence of porosity on laser damage threshold of sol-gel ZrO 2 and SiO 2 monolayer films

Optik

Volumn 123, Issue 6, 2012, Pages 479-484

  Guo, Y J ^a,b   Zu, X T ^a   Yuan, X D ^b   Jiang, X D ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

Laser induced damage threshold; Porous ratio; Thermal absorption

Indexed keywords

AMMONIA GAS; BASE CATALYZED; DIPCOATING METHODS; ELECTRON BEAM EVAPORATION METHODS; ELLIPSOMETERS; LASER DAMAGE THRESHOLD; LASER INDUCED DAMAGE THRESHOLDS; MONOLAYER FILM; MOVING PARTICLES; PHOTO-THERMAL; POROUS RATIO; SOLGEL FILMS; STANFORD; THERMAL ABSORPTIONS;

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; LASER DAMAGE; MONOLAYERS; OPTICAL MICROSCOPY; SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; ZIRCONIUM ALLOYS;

FILM PREPARATION;

EID: 84857111625     PISSN: 00304026     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijleo.2011.05.009     Document Type: Article

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