A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Endoh, T ^a   Togashi, S ^a   Iga, F ^a   Yoshida, Y ^a   Ohsawa, T ^a   Koike, H ^a   Fukami, S ^a   Ikeda, S ^a   Kasai, N ^a   Sakimura, N ^b   Hanyu, T ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS CIRCUITS; HYBRID CIRCUIT; IN-PLANE; INCUBATION TIME; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE; OPERATION POWER; STABLE OPERATION; SWITCHING ERRORS;

CMOS INTEGRATED CIRCUITS; ELECTRON DEVICES;

MAGNETIC DEVICES;

EID: 84857027206     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131487     Document Type: Conference Paper

References (5)

1. N.Sakimura et al., CICC2008, p. 355.
2. K.Tsuchida et al., ISSCC2010, p. 258.
3. T.Aoki et al., J. Appl. Phys., vol. 103, p. 103911, 2008.
4. S.Matsunaga et al., APEX, vol. 1 no. 9, p. 91301, 2008.
5. S.Yamamoto et al., JJAP, vol. 49, p. 40209, 2010.