The electronic properties of SiC graphene-like: Doped and no-doped case

Journal of Computational and Theoretical Nanoscience

Volumn 8, Issue 4, 2011, Pages 637-641

  Anota, E Chigo ^a   Cocoletzi, H Hernández ^a   Hernández, A Bautista ^a   Ramírez, J F Sánchez ^b  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

C nH m Cluster; DFT Theory; Silicon Carbide

Indexed keywords

C NH M CLUSTER; COHESIVE ENERGIES; COVALENT SYSTEMS; DFT THEORY; EXCHANGE-CORRELATIONS; FIRST-PRINCIPLES CALCULATION;

GRAPHENE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON; SILICON CARBIDE;

ELECTRONIC PROPERTIES;

EID: 84856944891     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2011.1733     Document Type: Article

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