IGBT and diode loss estimation under hysteresis switching

IEEE Transactions on Power Electronics

Volumn 27, Issue 3, 2012, Pages 1044-1048

  Bazzi, Ali M ^a   Krein, Philip T ^a   Kimball, Jonathan W ^b   Kepley, Kevin ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

^c Bitrode Corporation   (United States)

Author keywords

Aperiodic switching; electrothermal design; hysteresis switching; IGBT loss estimation; semiconductor losses

Indexed keywords

DC-BUS VOLTAGES; DESIGN OPTIMIZATION; GATE SIGNALS; HYSTERESIS SWITCHING; LOSS ESTIMATION; PHASE CURRENTS; POWER-LOSSES; SEMICONDUCTOR LOSS;

COMPUTER SIMULATION; DC POWER TRANSMISSION; ESTIMATION; HYSTERESIS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); OPTIMIZATION; SEMICONDUCTOR DIODES; THERMOANALYSIS;

SWITCHING;

EID: 84856940541     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2164267     Document Type: Article

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