The effect of tube filling on the electronic properties of Fe filled carbon nanotubes

Materials Chemistry and Physics

Volumn 132, Issue 2-3, 2012, Pages 300-308

  Linganiso, Ella C ^a   Chimowa, George ^a   Franklyn, Paul J ^a   Bhattacharyya, Somnath ^a   Coville, Neil J ^a  

^a UNIVERSITY OF THE WITWATERSRAND   (South Africa)

Author keywords

Carbon nanotubes; Chemical vapour deposition (CVD); Electrical characterization; Electrical conductivity; Fe filled tubes; Ferrocene

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; FILLING; NANORODS; NANOTUBES; ORGANOMETALLICS; TEMPERATURE DISTRIBUTION; YARN;

CHEMICAL VAPOUR DEPOSITION; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONDUCTIVITY; FERROCENES; FILLED CARBON NANOTUBES; INCREASED TEMPERATURE; TEMPERATURE DEPENDENCE; VARIABLE-RANGE-HOPPING CONDUCTIONS;

CARBON NANOTUBES;

EID: 84856618586     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.11.016     Document Type: Article

References (24)

1. M. R. Pederson, J. Q. Broughton, Phys. Rev. Lett. 69 (1992) 2689.
2. P. M. Ajayan, S. Iijima, Nature 361 (1993) 333.
3. S. C. Tsang, Y. K. Chen, P. J. F. Harris, M. L. H. Green, Nature 372 (1994) 159.
4. R. Sen, A. Govindaraj, C. N. R. Rao, Chem. Mater. 9 (1997) 2078.
5. P. J. F. Harris, S. C. Tsang, Chem. Phys. Lett. 293 (1998) 53.
6. N. Grobert, W. K. Hsu, Y. Q. Zhu, J. P. Hare, H. W. Kroto, M. Terrones, H. Terrones, P. Redlich, M. Ruhle, R. Euscudero, F. Morales, Appl. Phys. Lett. 75 (1999) 3363.
7. S. Liu, X. Tang, Y. Mastai, I. Felner, A. Gedanken, J. Mater. Chem. 10 (2000) 2502.
8. B. Rajesh, K. R. Thampi, J.-M. Bonard, B. Viswanathan, J. Mater. Chem. 10 (2000) 1757.
9. W. K. Hsu, S. Trasobares, H. Terrones, M. Terrones, N. Grobert, Y. Q. Zhu, W. Z. Li, R. Escudero, J. P. Hare, H. W. Kroto, D. R. M. Walton, Chem. Mater. 11 (1999) 1747.
10. Y. L. Hsin, K. C. Hwang, F. R. Chen, J. J. Kai, Adv. Mater. 13 (2001) 830.
11. J. Sloan, J. Hammer, M. Zwiefka-Sibley, M. L. H. Green, Chem. Commun. (1998) 347.
12. C. N. R. Rao, A. Govindaraj, R. Sen, B. C. Satishkumar, Mater. Res. Innov. 2 (1998) 128.
13. R. C. Che, L. M. Peng, X. F. Duan, Q. Chen, X. L. Liang, Adv. Mater. 16 (2004) 401.
14. I. Monch, A. Meye, A. Leonhardt, K. Kramer, R. Kozhuharova, T. Gemming, M. P. Wirth, B. Buchner, J. Magn. Magn. Mater. 290/291 (2005) 276.
15. A. Winkler, T. Muhl, S. Manzel, R. Kozhuharova-Koseva, S. Hampel, A. Leonhardt, B. Buchner, J. Appl. Phys. 99 (2006) 104905.
16. L. Sun, F. Banhart, A. V. Krasheninnikov, JA Rodriguez-Manzo, M. Terrones, P. M. Ajayan, Science 312 (2006) 1199.
17. A. L. M. Reddy, M. M. Shaijumon, S. Ramaprabhu, Nanotechnology 17 (2006) 5299.
18. D. C. Li, L. M. Dai, S. M. Huang, A. W. H. Mau, Z. L. Wang, Chem. Phys. Lett. 316 (2000) 349.
19. G. Chimowa, E. C. Linganiso, D. Churochkin, N. J. Coville, S. Bhattacharyya, Phys. Rev. B 84 (2011) 205429.
20. N. F. Mott, E. A. Davis, Electronic Processes In Non-crystalline Materials, 2nd ed., Clarendon, Oxford, 1979.
21. E. Medina, M. Kardar, Y. Shapir, X. R. Wang, Phys. Rev. Lett. 62 (1989) 941.
22. Y. Yosida, I. Oguro, J. Appl. Phys. 86 (1999) 999.
23. L. Essaleh, J. Galibert, S. M. Wasim, E. Hernandez, J. Leotin, Phys. Rev. B 50 (1994) 18040.
24. B. I. Shklovskii, A. L. Efros, Electronic Properties Of Doped Semiconductors, Springer-Verlag, Berlin, 1984, p. 202.