Well-crystalline ZnO nanowire based field effect transistors (FETs)

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 6, 2011, Pages 5102-5107

  Kim, S H ^a   Umar, Ahmad ^a   Hwang, S W ^a   Al Sayari, S A ^a   Abaker, M ^a   Al Hajry, A ^a  

^a NAJRAN UNIVERSITY   (Saudi Arabia)

Author keywords

Electrical characterization; FET; Structural properties; ZnO nanowires

Indexed keywords

AS-GROWN; CRYSTAL QUALITIES; ELECTRICAL CHARACTERIZATION; ELECTRICAL TRANSPORT PROPERTIES; FET; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HEXAGONAL PHASE; HIGH DENSITY; HIGH-RESOLUTION TEM; MORPHOLOGICAL CHARACTERIZATION; NON-CATALYTIC; SI(1 0 0); SILICON SUBSTRATES; SINGLE NANOWIRES; STRUCTURAL CHARACTERIZATION; TRANSMISSION ELECTRON MICROSCOPY TEM; WURTZITES; ZINC POWDER; ZNO NANOWIRES;

CRYSTALLINE MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; FIELD EMISSION MICROSCOPES; STRUCTURAL PROPERTIES; THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

NANOWIRES;

EID: 84856607038     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2011.4744     Document Type: Conference Paper

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