Nanostructure-driven analyte-interface electron transduction: A general approach to sensor and microreactor design

ChemPhysChem

Volumn 13, Issue 2, 2012, Pages 549-561

  Gole, James L ^a   Goude, Eddie C ^b   Laminack, William ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Florida   (United States)

Author keywords

interfaces; microreactors; nanostructures; semiconductors; sensors

Indexed keywords

AMMONIA; CHEMICAL REACTORS; CHEMISORPTION; INTERFACES (MATERIALS); INVERSE PROBLEMS; NANOSTRUCTURES; PHYSISORPTION; SEMICONDUCTOR MATERIALS; SENSORS; TEMPERATURE DISTRIBUTION;

CONTROLLABLE INTERACTIONS; CONTROLLED MANIPULATIONS; EXTRINSIC SEMICONDUCTORS; MAJORITY CHARGE CARRIERS; MICRO REACTOR; MOBILITIES OF ELECTRON; SEMICONDUCTOR INTERFACES; TEMPERATURE DEPENDENCE;

NANOANTENNAS;

EID: 84856378547     PISSN: 14394235     EISSN: 14397641     Source Type: Journal    
DOI: 10.1002/cphc.201100712     Document Type: Article

References (35)

1. G. Korotcenkov, B. K. Chou, Crit. Rev. Solid State Mater. Sci. 2010, 35, 1-37
2. J. L. Gole, J. Corno, S. Ozdemir, S. Prokes, H.-C. Shin, Phys. Status Solidi C 2009, 6, 1773-1776.
3. J. L. Gole, S. Ozdemir, ChemPhysChem 2010, 11, 2573-2581.
4. J. Campbell, J. A. Corno, N. Larsen, J. L. Gole, J. Electrochem. Soc. 2008, 155, D 128 -D 132.
5. J. Gole, S. Ozdemir, T. S. Osburn, ECS Trans. 2010, 33, 239-244
6. S. Ozdemir, J. L. Gole, ECS Trans. 2010, 33, 111-115
7. J. L. Gole, S. Ozdemir, S. M. Prokes, D. A. Dixon, MRS Proceedings, 2010, 1257-O09-04.
8. J. L. Gole, S. Ozdemir, Phys. Status Solidi C 2011, 8, 1833-1836.
9. R. G. Pearson, Coord. Chem. Rev. 1990, 100, 403-425
10. R. G. Pearson, J. Am. Chem. Soc. 1963, 85, 3533-3539
11. R. G. Pearson, Chemical Hardness, Wiley-VCH, Weinheim, 1997
12. R. G. Pearson, J. Chem. Sci. 2005, 117, 369-377
13. R. G. Pearson, Inorg. Chem. 1988, 27, 734-740.
14. R. G. Parr, R. G. Pearson, J. Am. Chem. Soc. 1983, 105, 7512-7516
15. R. G. Parr, W. Yang, Density Functional Theory of Atoms and Molecules, Oxford University Press, New York, 1989.
16. R. G. Parr, R. A. Donnelly, M. Levy, W. E. Palke, J. Chem. Phys. 1978, 68, 3801
17. W. Yang, R. G. Parr, Proc. Natl. Acad. Sci. USA 1985, 82, 6723
18. W. Yang, R. G. Parr, R. Pucci, J. Chem. Phys. 1984, 81, 2862
19. R. G. Parr, W. J. Yang, J. Am. Chem. Soc. 1984, 106, 4049-4050.
20. M. H. Cohen, A. Wasserman, J. Phys. Chem. A 2007, 111, 2229-2242.
21. C. G. Zhan, J. A. Nichols, D. A. Dixon, J. Phys. Chem. A 2003, 107, 4184-4195
22. P. Geerlings, F. De Proft, W. Langenaeker, Chem. Rev. 2003, 103, 1793-1874.
23. M. N. Rudden, J. Wilson, Elements of Solid State Physics, 2nd ed., Wiley, New York, 1993.
24. 2(EA)=(2.2730 ±0.0050) eV.
25. D. J. Grant, M. H. Matus, K. D. Anderson, D. M. Camaioni, S. Neufeldt, C. F. Lane, D. A. Dixon, J. Phys. Chem. A 2009, 113, 6121-6132. Ammonia is a Brnsted base.
26. M. J. Travers, D. C. Cowles, G. B. Ellison, Chem. Phys. Lett. 1989, 164, 449. NO(EA)=(0.0260±0.0050) eV.
27. S. Ozdemir, J. L. Gole, Sens. Actuators B 2010, 151, 274-280.
28. S. Ozdemir, T. Osburn, J. L. Gole, J. Electrochem. Soc. 2011, 158, J 201 -J 207.
29. W. Laminack, J. L. Gole, unpublished results.
30. H. Li, J. Xu, Y. Zhu, X. Chen, Q. Xiang, Talanta 2010, 82, 458-463.
31. S. S. Kim, J. Y. Park, S.-W. Choi, H. S. Kim, H. G. Na, J. C. Yang, H. W. Kim, Nanotechnology 2010, 21, 415502.
32. A. Kolmakov, D. O. Klenov, Y. Lilach, S. Stemmer, M. Moskovitz, Nano Lett. 2005, 5, 667-673.
33. "Macroporous Microstructures Including Silicon": See, for example, tables in, C. Lévy-Clément, Semiconductor Electrodes and Photoelectrochemistry, Vol. 6 (Ed.:, S. Licht,), Wiley-VCH, Weinheim, 2002, Chap. 3.2.
34. C. Lévy-Clément, A. Lagoubi, M. Tomkiewicz, J. Electrochem. Soc. 1994, 141, 958-967.
35. H. Föll, M. Christophersen, J. Carstenson, G. Hasse, Mater. Sci. Eng. 2002, 280, 1-49.