SCOPUS 정보 검색 플랫폼

Volumn 285, Issue 7, 2012, Pages 1864-1867

Enhancing the photoluminescence intensity of silicon-rich nitride film by localized surface plasmon enhanced photo-excitation

(5) Cheng, Peihong a Li, Dongsheng b Xie, Min b Yang, Deren b Bao, Jilong a

a NINGBO UNIVERSITY OF TECHNOLOGY (China)

b ZHEJIANG UNIVERSITY (China)

Author keywords

Photoluminescence; Silicon rich nitride; Surface Plasmon

Indexed keywords

AG ISLAND FILM; EMISSION ENHANCEMENT; EXCITATION CROSS-SECTIONS; EXCITATION WAVELENGTH; LOCALIZED SURFACE PLASMON; METAL ISLANDS; NITRIDE FILMS; PHOTO-EXCITATIONS; PHOTOLUMINESCENCE ENHANCEMENT; PHOTOLUMINESCENCE INTENSITIES; SPECTRAL REGION; SURFACE PLASMON; SURFACE PLASMONS;

ANTENNAS; NITRIDES; PHOTOLUMINESCENCE; PLASMONS;

SILVER;

EID: 84856230556 PISSN: 00304018 EISSN: None Source Type: Journal
DOI: 10.1016/j.optcom.2011.12.015 Document Type: Article

Times cited : (5)

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