Identification of defects at the interface between 3C-SiC quantum dots and a SiO2 embedding matrix

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 2, 2012, Pages 360-367

  Vörös, Márton ^a   Gali, Adam ^a,b   Kaxiras, Efthimios ^c   Frauenheim, Thomas ^d   Knaup, Jan M ^c,d  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^c HARVARD UNIVERSITY   (United States)

^d UNIVERSITY OF BREMEN   (Germany)

Author keywords

Defects; DFTB; Interfaces; Quantum dots; SiC

Indexed keywords

CARBONIZATION; CHEMICAL BONDS; DEFECTS; ELECTRONIC STRUCTURE; GRAPHENE QUANTUM DOTS; INTERFACES (MATERIALS); LATTICE MISMATCH; LOGIC DEVICES; NANOCRYSTALS; SILICA; SILICON CARBIDE; SILICON WAFERS; SIMULATED ANNEALING;

DFTB; ELECTRICALLY ACTIVES; ELECTRON HOLE PAIRS; EMBEDDING MATRICES; INTERFACE DEFECTS; RECOMBINATION CENTERS; SIC NANOPARTICLES; SIC/SIO2-INTERFACES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84856055851     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201100527     Document Type: Article

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