Low-temperature synthesis and characterization of gallium nitride quantum dots in ordered mesoporous silica

Journal of Physical Chemistry C

Volumn 116, Issue 1, 2012, Pages 1185-1194

  Dimos, Konstantinos ^a,b   Jankovič, L'Uboš ^a,c   Koutselas, Ioannis B ^b   Karakassides, Michael A ^a   Zbořil, Radek ^d   Komadel, Peter ^c  

^a UNIVERSITY OF IOANNINA   (Greece)

^b UNIVERSITY OF PATRAS   (Greece)

^c INSTITUTE OF CHEMISTRY   (Slovakia)

^d PALACKÝ UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DIAMETER; BAND GAP ENERGY; BLUE SHIFT; CUBIC SYMMETRY; DEFECT LUMINESCENCE; DIMETHYLAMIDO; HEXAGONAL SYMMETRY; HEXAGONAL SYSTEMS; HIGH ENERGY; HOST MATRICES; INORGANIC PRECURSOR; INTENSE BLUE; LOW TEMPERATURE SYNTHESIS; LOW TEMPERATURES; ORDERED MESOPOROUS SILICAS; ORGANIC PRECURSOR; ORGANOGALLIUM; PRECURSOR COMPOUNDS; STRUCTURAL CHARACTERIZATION; SYNTHETIC ROUTES; THREE-DIMENSIONAL (3D); UV REGION; WURTZITE STRUCTURE; ZINC BLENDE LATTICE;

AMMONIA; ENERGY GAP; GALLIUM NITRIDE; LUMINESCENCE; MESOPOROUS MATERIALS; PYROLYSIS; SILICA; THREE DIMENSIONAL; X RAY DIFFRACTION; ZINC SULFIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84855928926     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp208011y     Document Type: Article

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