Optical limiting in pulsed laser deposited VO 2 nanostructures

Optics Communications

Volumn 285, Issue 6, 2012, Pages 1190-1193

  Maaza, M ^a,b,c,d   Hamidi, D ^a   Simo, A ^a   Kerdja, T ^a,c   Chaudhary, A K ^a,e   Kana Kana, J B ^a,f  

^a NATIONAL RESEARCH FOUNDATION   (South Africa)

^b TSHWANE UNIVERSITY OF TECHNOLOGY   (South Africa)

^c African Laser Centre   (South Africa)

^d CENTRE DE DÉVELOPPEMENT DES TECHNOLOGIES AVANCÉES   (Algeria)

^e UNIVERSITY OF HYDERABAD   (India)

^f University of Arizona   (United States)

Author keywords

Femtosecond regime; Infrared; Optical limiting; Phase transition; Refractive index modulation; Vanadium dioxide

Indexed keywords

AMBIENT PRESSURES; BAND GAPS; FEMTOSECONDS; FIRST ORDER; OPTICAL LIMITING; PULSE LASER; REFRACTIVE INDEX MODULATION; THERMAL STIMULI; ULTRA-FAST; VANADIUM DIOXIDE;

INFRARED RADIATION; METAL INSULATOR BOUNDARIES; NANOSTRUCTURES; PHASE TRANSITIONS; PULSED LASER DEPOSITION; PULSED LASERS; REFRACTIVE INDEX; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM;

METAL INSULATOR TRANSITION;

EID: 84855891141     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2011.09.057     Document Type: Article

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