Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC

ACS Applied Materials and Interfaces

Volumn 3, Issue 11, 2011, Pages 4286-4291

  Dietmueller, Roland ^a   Nesswetter, Helmut ^a   Schoell, Sebastian J ^a   Sharp, Ian D ^a   Stutzmann, Martin ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

band alignment; current voltage measurements; organic inorganic heterojunction; P3HT; silicon carbide; type II heterojunction

Indexed keywords

BAND ALIGNMENTS; CURRENT-VOLTAGE MEASUREMENTS; ORGANIC-INORGANIC HETEROJUNCTION; P3HT; TYPE II HETEROJUNCTION;

ALIGNMENT; ELECTRIC CONDUCTIVITY; HYBRID MATERIALS; MOLECULAR ORBITALS; OPEN CIRCUIT VOLTAGE; SILICON CARBIDE; THERMIONIC EMISSION; VANADIUM; VOLTAGE MEASUREMENT;

HETEROJUNCTIONS;

EID: 84855867197     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am200952s     Document Type: Article

References (35)

1. Ishii, H.; Sugiyama, K.; Ito, E.; Seki, K. Adv. Mater. 1999, 11, 605-625
2. Sze, S.; Ng, K. Physics of Semiconductor Devices; John Wiley & Sons: Hoboken, NJ, 2007.
3. Niesar, S.; Dietmueller, R.; Nesswetter, H.; Wiggers, H.; Stutzmann, M. Phys. Status Solidi (a) 2009, 206, 2775-2781
4. Forrest, S. R.; Kaplan, M. L.; Schmidt, P. H. J. Appl. Phys. 1984, 55, 1492
5. Fisher, G. R.; Barnes, P. Philos. Mag. B 1990, 61, 217
6. Shen, G.; Chen, D.; Tang, K.; Qian, Y.; Zhang, S. Chem. Phys. Lett. 2003, 375, 177-184
7. Honda, S.-I.; Baek, Y.-G.; Ikuno, T.; Kohara, H.; Katayama, M.; Oura, K.; Hirao, T. Appl. Surf. Sci. 2003, 212-213, 378-382
8. Liu, Z.; Ci, L.; Jin-Phillipp, N. Y.; Ruehle, M. J. Phys. Chem. C 2007, 111, 12517-12521
9. Schoell, S. J.; Hoeb, M.; Sharp, I. D.; Steins, W.; Eickhoff, M.; Stutzmann, M.; Brandt, M. S. Appl. Phys. Lett. 2008, 92, 153301
10. Rosso, M.; Giesbers, M.; Arafat, A.; Schroen, K.; Zuilhof, H. Langmuir 2009, 25, 2172-2180
11. Steenackers, M.; Sharp, I. D.; Larsson, K.; Hutter, N. A.; Stutzmann, M.; Jordan, R. Chem. Mater. 2010, 22, 272-278
12. Levinshtein, M.; Rumyantsev, S.; Shur, M. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe; John Wiley & Sons: New York, 2001.
13. Gowrishankar, V.; Scully, S. R.; McGehee, M. D.; Wang, Q.; Branz, H. M. Appl. Phys. Lett. 2006, 89, 252102
14. Pelletier, J.; Gervais, D.; Pomot, C. J. Appl. Phys. 1984, 55, 994
15. Cascio, A. J.; Lyon, J. E.; Beerbom, M. M.; Schlaf, R.; Zhu, Y.; Jenekhe, S. A. Appl. Phys. Lett. 2006, 88, 062104
16. Van de Walle, C. G.; Neugebauer, J. Nature 2003, 423, 626-628
17. Dillon, J. A.; Schlier, R. E.; Farnsworth, H. E. J. Appl. Phys. 1959, 30, 675
18. Chirvase, D.; Chiguvare, Z.; Knipper, M.; Parisi, J.; Dyakonov, V.; Hummelen, J. C. Synth. Met. 2003, 138, 299-304
19. Oku, T.; Nagaoka, S.; Suzuki, A.; Kikuchi, K.; Hayashi, Y.; Inukai, H.; Sakuragi, H.; Soga, T. J. Phys. Chem. Solids 2008, 69, 1276-1279
20. Thakur, A. K.; Mukherjee, A. K.; Preethichandra, D. M. G.; Takashima, W.; Kaneto, K. J. Appl. Phys. 2007, 101, 104508
21. Chang, J.-F.; Sun, B.; Breiby, D. W.; Nielsen, M. M.; Soelling, T. I.; Giles, M.; McCulloch, I.; Sirringhaus, H. Chem. Mater. 2004, 16, 4772-4776
22. Wuerfel, P. Physik der Solarzellen; Spektrum Akademischer Verlag: Heidelberg, Berlin, 2000.
23. Pallarees, J.; Cabree, R.; Marsal, L. F.; Schropp, R. E. I. J. Appl. Phys. 2006, 100, 084513
24. Huynh, W. U.; Dittmer, J. J.; Teclemariam, N.; Milliron, D. J.; Alivisatos, A. P.; Barnham, K. W. J. Phys. Rev. B 2003, 67, 115326
25. Reshanov, S. A.; Emtsev, K. V.; Speck, F.; Gao, K.; Seyller, T. K.; Pensl, G.; Ley, L. Phys. Status Solidi (b) 2008, 245, 1369-1377
26. Ruff, M.; Mitlehner, H.; Helbig, R. IEEE Trans. Electron Devices 1994, 41, 1040-1054
27. Breitenstein, O.; Bauer, J.; Lotnyk, A.; Wagner, J. Superlatt. Microstr. 2009, 45, 182-189
28. Philipp, H.; Taft, E. Silicon Carbide-A High Temperature Semiconductor; Pergamon Press: Oxford, U.K., 1960.
29. Polyakov, A. Y.; Li, Q.; Huh, S. W.; Skowronski, M.; Lopatiuk, O.; Chernyak, L.; Sanchez, E. J. Appl. Phys. 2005, 97, 053703
30. Campbell, I. H.; Hagler, T. W.; Smith, D. L.; Ferraris, J. P. Phys. Rev. Lett. 1996, 76, 1900
31. Markov, D. E.; Amsterdam, E.; Blom, P. W. M.; Sieval, A. B.; Hummelen, J. C. J. Phys. Chem. A 2005, 109, 5266-5274
32. Deibel, C.; Strobel, T.; Dyakonov, V. Phys. Rev. Lett. 2009, 103, 036402
33. Riedel, I.; Parisi, J.; Dyakonov, V.; Lutsen, L.; Vanderzande, D.; Hummelen, J. C. Adv. Funct. Mater. 2004, 14, 38-44
34. Rand, B. P.; Burk, D. P.; Forrest, S. R. Phys. Rev. B 2007, 75, 115327
35. Brabec, C. J.; Cravino, A.; Meissner, D.; Sariciftci, N. S.; Fromherz, T.; Rispens, M. T.; Sanchez, L.; Hummelen, J. C. Adv. Funct. Mater. 2001, 11, 374-380