Fabrication of Cu2ZnSnS4solar cells by sulfurization of evaporated precursors

Energy Procedia

Volumn 10, Issue , 2011, Pages 187-191

  Biccari, Francesco ^a   Chierchia, Rosa ^a   Valentini, Matteo ^a   Mangiapane, Pietro ^a   Salza, Enrico ^a   Malerba, Claudia ^a,b   Ricardo, Cristy Leonor Azanza ^b   Mannarino, Loredana ^c   Scardi, Paolo ^b   Mittiga, Alberto ^a  

^a ENEA C R CASACCIA   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

^c FN Spa   (Italy)

Author keywords

Back contact; CZTS; Molybdenum; MoS2

Indexed keywords

CHARACTERIZATION; COPPER; ELECTRONIC PROPERTIES; FILM PREPARATION; MOLYBDENUM; PHOTOVOLTAIC EFFECTS; RAMAN SPECTROSCOPY; TIN; ZINC SULFIDE;

BACK CONTACT; CZTS; MOBILITY MEASUREMENTS; MOS2; SEM-EDS; THIN FILM PHOTOVOLTAIC MODULES; XRD; ZNO;

NANOSTRUCTURED MATERIALS;

EID: 84855711373     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.10.175     Document Type: Article

References (17)

1. Wang K, Gunawan O, Todorov T, Shin B, Chey SJ, Bojarczuk NA, Mitzi D, Guha S. Thermally evaporated Cu2ZnSnS4 solar cells. Appl Phys Lett 2010;97:143508.
2. Katagiri H, Jimbo K, Tahara M, Araki H, Oishi K. The influence of the composition ratio on CZTS-based thin film solar cells. Proc. of the EMRS conference 2009;1165:M04-01.
3. 4thin film solar cells. Thin Solid Films 2005;480-481:426-432. (Pubitemid 40643016)
4. Redinger A, Berg DM, Dale PJ, Siebentritt S. The consequences of kesterite equilibria for efficient solar cells. J Am Chem Soc 2011;133:3320-3323.
5. Weber A, Mainz R, Schock HW. On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum. J Appl Phys 2010;107:013516.
6. 4. J Appl Phys 2010;107:053710.
7. 4thin films. Thin Solid Films 2009;517:2519-2523.
8. 2-based solar cells by Raman scattering. Appl Phys Lett 2003;82:4370-4372.
9. Sinton RA, Cuevas A. A quasi-steady-state open-circuit voltage method for solar cell characterization. Proc. of the 16th European PVSEC Glasgow Scotland 2000:1152-1155.
10. 4. Appl Phys Lett 2010;96:021902
11. Matson RJ, Jamjoum O, Buonaquisti AD, Russell PE, Kazmerski LL, Sheldon P, Ahrenkiel RK. Metal contacts to CuInSe2. Sol Cells 1984;11:301-305.
12. Abou-Ras D, Kostorz G, Bremaud D, Kälin M, Kurdesau FV, Tiwari AN, Döbeli M. Formation and characterisation of MoSe2 for Cu(In,Ga)Se2 based solar cells. Thin Solid Films 2005;480-481:433-438. (Pubitemid 40643017)
13. Bär M, Nishiwaki S, Weinhardt L, Pookpanratana S, Shafarman WN, Heske C. Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells. Appl Phys Lett 2008;93:042110.
14. Kautek W, Gerischer H, Tributsch H. The role of carrier diffusion and indirect optical transitions in the photoelectrochemical behavior of layer type d-band semiconductors. J Electrochem Soc 1980;127:2471-2478. (Pubitemid 11455282)
15. Shimada T, Ohuchi FS, Parkinson BA. Work function and photothreshold of layered metal dichalcogenides. Jpn J Appl Phys 1994;33:2696-2698.
16. 4interface. Proc. of the MRS spring meeting 2010;1268:1268-EE03-03.
17. 2thin film synthesis by soft sulfurization of a molybdenum layer. Mater Chem Phys 1995;42:291-297.