Depth dependent optoelectronic properties of Cu(In,Ga)Se 2 with lateral resolution in the micron/submicron scale from luminescence studies

Energy Procedia

Volumn 10, Issue , 2011, Pages 208-212

  Bauer, G H ^a   Heise, S J ^a   Knabe, S ^a   Neumann, O ^a   Bruggemann R ^a   Hariskos, D ^b   Witte, W ^b  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW   (Germany)

Author keywords

Chalcopyrite; Confocal photoluminescence; Cu(In; Ga)Se 2; Inhomogeneities; Thickness dependence; Thin film absorbers

Indexed keywords

CHALCOPYRITE; CU(IN , GA)SE; DEPTH PROFILE; GA CONTENT; HIGH-LATERAL RESOLUTION; IN-BAND; INHOMOGENEITIES; LATERAL FLUCTUATIONS; LATERAL RESOLUTION; LATERAL VARIATIONS; LUMINESCENCE STUDIES; OPTOELECTRONIC PROPERTIES; PHOTOVOLTAICS; QUASI-FERMI LEVEL; SPATIAL RESOLUTION; SPECTRAL ABSORPTIONS; STANDARD SAMPLES; THICKNESS DEPENDENCE; THIN-FILM ABSORBERS;

COPPER COMPOUNDS; ENERGY GAP; FERMI LEVEL; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS;

GALLIUM;

EID: 84855672808     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.10.179     Document Type: Conference Paper

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