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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 1, 2012, Pages

Chemical passivation of GaSb-based surfaces by atomic layer deposited ZnS using diethylzinc and hydrogen sulfide

(2) Xu, Runshen a Takoudis, Christos G a

a University of Illinois at Chicago (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY OXIDES; ATMOSPHERIC AIR; ATOMIC LAYER DEPOSITED; CAPPING LAYER; CHEMICAL PASSIVATION; DEPOSITION CYCLES; DIETHYLZINC; GLANCING INCIDENCE X-RAY DIFFRACTIONS; INAS/GASB; NANO FILMS; OXIDE FORMATION; OXYGEN DIFFUSION; PASSIVATED SURFACE; SURFACE CHEMICALS; THIOACETAMIDE; ZNS FILMS; ZNS THIN FILMS;

ANTIMONY; ATOMIC LAYER DEPOSITION; DEPOSITION; FILM GROWTH; GALLIUM; GALLIUM ALLOYS; HYDROGEN; HYDROGEN SULFIDE; INDIUM ANTIMONIDES; PASSIVATION; SULFUR DETERMINATION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC SULFIDE;

EID: 84855594535 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3669519 Document Type: Article

Times cited : (7)

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