Crystal structure, spin polarization, solid-state electrochemistry, and high n-type carrier mobility of a paramagnetic semiconductor: Vanadyl tetrakis(thiadiazole)porphyrazine

Inorganic Chemistry

Volumn 51, Issue 1, 2012, Pages 456-462

  Miyoshi, Yasuhito ^a   Takahashi, Kouji ^a   Fujimoto, Takuya ^a   Yoshikawa, Hirofumi ^a   Matsushita, Michio M ^a   Ouchi, Yukio ^a   Kepenekian, Mikael ^b   Robert, Vincent ^b   Donzello, Maria Pia ^c   Ercolani, Claudio ^c   Awaga, Kunio ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b UNIVERSITÉ DE STRASBOURG   (France)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84855406023     PISSN: 00201669     EISSN: None     Source Type: Journal    
DOI: 10.1021/ic201880g     Document Type: Article

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44. 0). CCDC 810116 (for the α form) and 810117 (for the β form) contain the SUPPL.ementary crystallographic data for this paper. These data can be obtained free of charge via www.ccdc.cam.ac.uk/conts/retrieving.html (or from the Cambridge Crystallographic Data Centre, 12 Union Road, Cambridge CB21EZ, U.K.; fax (+44)1223-336-033 or e-mail deposit@ccdc.cam.ac.uk).
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