Interplay between the hot phonon effect and intervalley scattering on the cooling rate of hot carriers in GaAs and InP

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 1, 2012, Pages 82-92

  Clady, Raphael ^a   Tayebjee, Murad J Y ^a   Aliberti, Pasquale ^b   König, Dirk ^b   Ekins Daukes, Nicholas John ^c   Conibeer, Gavin J ^b   Schmidt, Timothy W ^a   Green, Martin A ^b  

^a UNIVERSITY OF SYDNEY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

electron phonon interaction; hot carrier; hot phonon effect; intervalley scattering; time resolved photoluminescence

Indexed keywords

BAND GAP ENERGY; CARRIER COOLING; COOLING RATES; DECAY TRANSIENTS; EXPERIMENTAL EVIDENCE; FEMTOSECOND TIME-RESOLVED; GAAS; HOT-CARRIER RELAXATION; HOT-PHONON EFFECTS; INP; INTERVALLEY SCATTERING; PHOTOLUMINESCENCE SIGNALS; PICOSECONDS; PUMP PULSE ENERGY; TEMPERATURE TRANSIENTS; TIME-RESOLVED PHOTOLUMINESCENCE; TWO-DIMENSIONAL SPECTRA;

COOLING; ELECTRON-PHONON INTERACTIONS; EXCITATION ENERGY; HOT CARRIERS; OPTICAL PUMPING; PHOTOEXCITATION; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SCATTERING; SEMICONDUCTING GALLIUM; TRANSIENTS;

GALLIUM ARSENIDE;

EID: 84855305784     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1121     Document Type: Article

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