Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1720-1724

  Bertoluzza, F ^a,b   Cova, P ^a   Delmonte, N ^a   Pampili, P ^b   Portesine, M ^b  

^a UNIVERSITY OF PARMA   (Italy)

^b POSEICO SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; DIODES; SEMICONDUCTOR DEVICES;

FAST RECOVERY; HIGH-POWER DEVICES; INDUSTRIAL DRIVES; OPERATING CONDITION; RELIABILITY REQUIREMENTS; RENEWABLE ENERGIES; SIMULATION PROCEDURES; SIMULATION-BASED DESIGNS;

SEMICONDUCTOR DIODES;

EID: 84755161124     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.123     Document Type: Article

References (7)

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3. Galster N et al. The design, application and production testing of high power fast recovery diodes. In: Proc PCIM; 1998.
4. Arora ND et al. Electron and hole mobilities in Silicon as a function of concentration and temperature. IEEE trans electron dev, vol. ED-29; 1982. p. 292-5.
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6. B.K. Ridley Reconciliation of the Conwell - Weisskopf and Brooks - Herring formulae for charged - impurity scattering in semiconductors: third - body interference Solid State Phys 10 1977
7. C. Canali Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature IEEE Trans Electron Dev ED-22 1975 1045 1047