Epitaxial superconducting δ-mon films grown by a chemical solution method

Journal of the American Chemical Society

Volumn 133, Issue 51, 2011, Pages 20735-20737

  Zhang, Yingying ^a,d   Haberkorn, Nestor ^a   Ronning, Filip ^a   Wang, Haiyan ^e   Mara, Nathan A ^a   Zhuo, Mujin ^a   Chen, Li ^d   Lee, Joon Hwan ^d   Blackmore, Karen J ^a   Bauer, Eve ^a   Burrell, Anthony K ^a   McCleskey, Thomas M ^a   Hawley, Marilyn E ^b   Schulze, Roland K ^b   Civale, Leonardo ^a   Tajima, Tsuyoshi ^c   Jia, Quanxi ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d TSINGHUA UNIVERSITY   (China)

^e Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT PRESSURES; CHEMICAL SOLUTION METHOD; CRITICAL FIELDS; CURRENT CARRYING CAPABILITY; EPITAXIAL THIN FILMS; EXTREME CONDITIONS; HIGH TEMPERATURE AND HIGH PRESSURE; SHARP TRANSITION; SUPERCONDUCTING PROPERTIES;

CHEMICALS; EPITAXIAL GROWTH; HIGH TEMPERATURE APPLICATIONS; SUPERCONDUCTING FILMS; SUPERCONDUCTIVITY;

EPITAXIAL FILMS;

ALUMINUM OXIDE; MOLYBDENUM; MOLYBDENUM NITRIDE; NITROGEN DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL PROCEDURES; CONDUCTANCE; CRYSTAL STRUCTURE; ELECTRIC CURRENT; FILM; HIGH TEMPERATURE; HYPERBARISM; MAGNETIC FIELD; POLYMER ASSISTED DEPOSITION; PRESSURE; SUPERCONDUCTOR; SYNTHESIS; TRANSITION TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; ULTRAFILTRATION; X RAY DIFFRACTION;

EID: 84555188827     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja208868k     Document Type: Article

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