Infrared spectroscopy of wafer-scale graphene

ACS Nano

Volumn 5, Issue 12, 2011, Pages 9854-9860

  Yan, Hugen ^a   Xia, Fengnian ^a   Zhu, Wenjuan ^a   Freitag, Marcus ^a   Dimitrakopoulos, Christos ^a   Bol, Ageeth A ^a   Tulevski, George ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

chemical doping; Drude weight; grapheme; infrared spectroscopy

Indexed keywords

BAND FILLINGS; BI-LAYER; CHEMICAL DOPING; CHEMICALLY DOPED; DOPING LEVELS; DRUDE WEIGHT; FAR-INFRARED; FREE CARRIER ABSORPTION; FREE CARRIERS; GRAPHEME; GRAPHENE LAYERS; HIGH TRANSMISSION; INTER-BAND TRANSITION; MID-IR ABSORPTION; PAULI BLOCKING; SCATTERING RATES; SHEET RESISTIVITY; SINGLE LAYER; TERAHERTZ OPTOELECTRONICS; THIN MATERIALS; TWO LAYERS; WAFER-SCALE;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; INFRARED SPECTROSCOPY; OPTICAL CONDUCTIVITY; SILICON CARBIDE; SILICON WAFERS;

GRAPHENE;

GRAPHITE; NANOMATERIAL;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; INFRARED SPECTROPHOTOMETRY; MATERIALS TESTING; PARTICLE SIZE; REFRACTOMETRY; ULTRASTRUCTURE;

GRAPHITE; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; PARTICLE SIZE; REFRACTOMETRY; SPECTROPHOTOMETRY, INFRARED;

EID: 84555177316     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn203506n     Document Type: Article

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