Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Nature Communications

Volumn 2, Issue 1, 2011, Pages

  Xiao, Di ^a   Zhu, Wenguang ^a,b   Ran, Ying ^c   Nagaosa, Naoto ^d,e   Okamoto, Satoshi ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c BOSTON COLLEGE   (United States)

^d UNIVERSITY OF TOKYO   (Japan)

^e RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE; TRANSITION METAL OXIDE; UNCLASSIFIED DRUG; CALCIUM DERIVATIVE; LANTHANUM; OXIDE; PEROVSKITE; TITANIUM; TRANSITION ELEMENT;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; ELECTRICAL EQUIPMENT; MOLECULAR MODEL; PROCESS DESIGN; QUANTUM HALL EFFECT; QUANTUM MECHANICS; ROOM TEMPERATURE; TOPOLOGICAL INSULATOR; CHEMISTRY; CRYSTALLIZATION; ELECTRONICS; ENGINEERING; METHODOLOGY; QUANTUM THEORY; THEORETICAL MODEL;

CALCIUM COMPOUNDS; CRYSTALLIZATION; ELECTRONICS; ENGINEERING; LANTHANUM; MODELS, THEORETICAL; OXIDES; QUANTUM THEORY; TITANIUM; TRANSITION ELEMENTS;

EID: 84455194882     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms1602     Document Type: Article

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