Structural, electronic and defect properties of Cu 2ZnSn(S,Se) 4 alloys

Materials Research Society Symposium Proceedings

Volumn 1370, Issue , 2011, Pages 55-66

  Chen, Shiyou ^a,b   Gong, Xin Gao ^a   Walsh, Aron ^c   Wei, Su Huai ^d  

^a FUDAN UNIVERSITY   (China)

^b EAST CHINA NORMAL UNIVERSITY   (China)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER MATERIAL; ACCEPTOR LEVELS; BAND GAP BOWING PARAMETER; CATION ORDERING; DEFECT PROPERTY; HIGH QUALITY CRYSTALS; INTRINSIC DEFECTS; KESTERITES; N-TYPE DOPING; P-TYPE; SECONDARY COMPOUNDS; SELF-DOPED; THIN-FILM SOLAR CELLS; X-RAY DIFFRACTION TECHNIQUES;

ALLOYS; CERIUM ALLOYS; CHEMICAL COMPOUNDS; CHEMICAL STABILITY; COPPER; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; NANOSTRUCTURED MATERIALS; PHASE STABILITY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION; ZINC SULFIDE;

COPPER ALLOYS;

EID: 83755178561     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.764     Document Type: Conference Paper

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