Effect of hydrogen on the chemical bonding and band structure at the Al 2O 3/In 0.53Ga 0.47As interface

Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

  Shekhter, Pini ^a   Kornblum, Lior ^a   Liu, Zuoguang ^b   Cui, Sharon ^b   Ma, T P ^b   Eizenberg, Moshe ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; ATOMIC DEPOSITION; BAND OFFSETS; CHEMICAL BONDINGS; EFFECT OF HYDROGEN; FERMI LEVEL PINNING; FORMING GAS; HIGH-MOBILITY SEMICONDUCTORS; METAL OXIDE SEMICONDUCTOR; PRE-DEPOSITION; SURFACE PASSIVATION;

ALUMINUM; CHEMICAL BONDS; HYDROGEN; PASSIVATION; PLASMA DEPOSITION; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICES; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 83455230755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664778     Document Type: Article

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