Identification of radiation-induced parasitic leakage paths using light emission microscopy

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2782-2786

  Shaneyfelt, Marty R ^a   Tangyunyong, Paiboon ^a   Hill, Thomas A ^a   Soden, Jerry M ^a   Flores, Richard S ^a   Schwank, James R ^a   Dodd, Paul E ^a   Hash, Gerald L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Integrated circuit reliability; Integrated circuit testing; Light emission microscopy; Radiation effects; Radiation hardening (electronics); Radiation response; Total dose

Indexed keywords

CHARGE COUPLED DEVICES; DOSIMETRY; INTEGRATED CIRCUIT TESTING; LIGHT EMISSION; MICROSCOPIC EXAMINATION; RADIATION EFFECTS; RANDOM ACCESS STORAGE; SEMICONDUCTOR MATERIALS;

INTEGRATED CIRCUIT RELIABILITY; LIGHT EMISSION MICROSCOPY; RADIATION RESPONSE;

INTEGRATED CIRCUITS;

EID: 8344276055     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835074     Document Type: Article

References (8)

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