Chemical vapor deposition of GaP and GaAs thin films from [ nBu2Ga(μ- e tBu2) 2GanBu2] (E = P or As) and Ga(P tBu2)3

Chemistry of Materials

Volumn 23, Issue 23, 2011, Pages 5217-5222

  Cheng, Fei ^a   George, Kathryn ^a   Hector, Andrew L ^a   Jura, Marek ^b   Kroner, Anna ^c   Levason, William ^a   Nesbitt, John ^a   Reid, Gillian ^a   Smith, David C ^a   Wilson, James W ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c DIAMOND LIGHT SOURCE LTD   (United Kingdom)

Author keywords

chemical vapor deposition; gallium arsenide; gallium phosphide; luminescence

Indexed keywords

CARBON DEPOSITION; CHEMICAL FLUID DEPOSITION; DEPOSITED MATERIALS; ELECTRONIC QUALITY; GAAS; GAAS FILMS; GAAS THIN FILMS; MICRO CRYSTALLITE; SEM/EDX; SINGLE-CRYSTALLINE; SINGLE-SOURCE PRECURSOR; SUBSTRATE SURFACE; SUPER-CRITICAL; TEMPERATURE RANGE;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEGRADATION; DIMERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HEXANE; LUMINESCENCE; NANORODS; NANOWIRES; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SILICA; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION;

EID: 82955205888     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm202158a     Document Type: Article

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