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Volumn , Issue , 2011, Pages 203-206
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Variability analysis of scaled poly-Si channel FinFETs and tri-gate flash memories for high density and low cost stacked 3D-memory application
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL CHANNELS;
FINFETS;
FLOATING GATES;
GATE LENGTH;
GATE OXIDE THICKNESS;
HIGH DENSITY;
LOW COSTS;
MEMORY APPLICATIONS;
PROGRAM/ERASE;
PUNCH-THROUGH;
STANDARD DEVIATION;
TRIGATE;
VARIABILITY ANALYSIS;
INTEGRATED CIRCUITS;
SILICON;
FLASH MEMORY;
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EID: 82955195055
PISSN: 19308876
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2011.6044199 Document Type: Conference Paper |
Times cited : (2)
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References (11)
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