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Volumn , Issue , 2011, Pages 203-206

Variability analysis of scaled poly-Si channel FinFETs and tri-gate flash memories for high density and low cost stacked 3D-memory application

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL CHANNELS; FINFETS; FLOATING GATES; GATE LENGTH; GATE OXIDE THICKNESS; HIGH DENSITY; LOW COSTS; MEMORY APPLICATIONS; PROGRAM/ERASE; PUNCH-THROUGH; STANDARD DEVIATION; TRIGATE; VARIABILITY ANALYSIS;

EID: 82955195055     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2011.6044199     Document Type: Conference Paper
Times cited : (2)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.