Domain structure and in-plane switching in a highly strained Bi 0.9Sm0.1FeO3 film

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Chen, Weigang ^a   Ren, Wei ^b   You, Lu ^a   Yang, Yurong ^b,c   Chen, Zuhuang ^a   Qi, Yajun ^a   Zou, Xi ^a   Wang, Junling ^a   Sritharan, Thirumany ^a   Yang, Ping ^d   Bellaiche, L ^b   Chen, Lang ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF ARKANSAS   (United States)

^c NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN STRUCTURE; ELECTRIC POLING; EPITAXIALLY GROWN; FERROELECTRIC PROPERTY; FIRST-PRINCIPLES CALCULATION; HIGHLY STRAINED; IN-PLANE; IN-PLANE POLARIZATION; IN-PLANE SWITCHING; MC PHASE; MONOCLINIC DISTORTION; PIEZORESPONSE; POLARIZATION HYSTERESIS LOOPS; WALL ROTATION;

CALCULATIONS; CRYSTALS; LANTHANUM ALLOYS; POLARIZATION;

IRON OXIDES;

EID: 82955194694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664394     Document Type: Article

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