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Volumn , Issue , 2011, Pages 103-106

Nanowire-based RRAM crossbar memory with metallic core-oxide shell nanostructure

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; CORE-SHELL; CROSS-BAR MEMORIES; METAL-OXIDE; METALLIC CORES; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SHELL NANOSTRUCTURES;

EID: 82955188020     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2011.6044224     Document Type: Conference Paper
Times cited : (4)

References (9)
  • 1
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    • Waser, R.1    Aono, M.2
  • 3
    • 79952279993 scopus 로고    scopus 로고
    • Control of filament size and reduction of reset current below 10 ìA in NiO resistance switching memories
    • F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D. J. Wouters, "Control of filament size and reduction of reset current below 10 ìA in NiO resistance switching memories," Solid State Electronics 58, 42-47 (2011).
    • (2011) Solid State Electronics , vol.58 , pp. 42-47
    • Nardi, F.1    Ielmini, D.2    Cagli, C.3    Spiga, S.4    Fanciulli, M.5    Goux, L.6    Wouters, D.J.7
  • 5
    • 40449139079 scopus 로고    scopus 로고
    • Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches
    • Y. Dong, G. Yu, M. C. McAlpine, W. Lu and C. M. Lieber, "Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches," Nano Lett. 8, 386 (2008).
    • (2008) Nano Lett. , vol.8 , pp. 386
    • Dong, Y.1    Yu, G.2    McAlpine, M.C.3    Lu, W.4    Lieber, C.M.5
  • 6
    • 77952933126 scopus 로고    scopus 로고
    • NiO resistance random access memory nanocapacitor array on graphene
    • J. Y. Son, Y.-H. Shin, H. Kim and H. M. Jang, "NiO resistance random access memory nanocapacitor array on graphene," ACS Nano 4, 2655 (2010).
    • (2010) ACS Nano , vol.4 , pp. 2655
    • Son, J.Y.1    Shin, Y.-H.2    Kim, H.3    Jang, H.M.4
  • 7
    • 59849099356 scopus 로고    scopus 로고
    • Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
    • U. Russo, D. Ielmini, C. Cagli and A. L. Lacaita, "Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices," IEEE Trans. Electron Devices 56, 186 (2009).
    • (2009) IEEE Trans. Electron Devices , vol.56 , pp. 186
    • Russo, U.1    Ielmini, D.2    Cagli, C.3    Lacaita, A.L.4
  • 8
    • 54149090685 scopus 로고    scopus 로고
    • Field-induced semiconductor-metal transition in individual NiO-Ni Schottky nanojunction
    • X. Zhao, J.-L. Sun and J.-L. Zhu, "Field-induced semiconductor-metal transition in individual NiO-Ni Schottky nanojunction," Appl. Phys. Lett. 93, 152107 (2008).
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 152107
    • Zhao, X.1    Sun, J.-L.2    Zhu, J.-L.3
  • 9
    • 70350057158 scopus 로고    scopus 로고
    • Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells
    • L. Goux, J. G. Lisoni, X. P. Wang, M. Jurczak, and D. J. Wouters, "Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells," IEEE Trans. Electron Devices 56, 2363 (2009).
    • (2009) IEEE Trans. Electron Devices , vol.56 , pp. 2363
    • Goux, L.1    Lisoni, J.G.2    Wang, X.P.3    Jurczak, M.4    Wouters, D.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.