Growth of few-layer graphene on sapphire substrates by directly depositing carbon atoms

Chinese Physics Letters

Volumn 28, Issue 11, 2011, Pages

  Kang, Chao Yang ^a   Tang, Jun ^a   Liu, Zhong Liang ^a,b   Li, Li Min ^a   Yan, Wen Sheng ^a   Wei, Shi Qiang ^a   Xu, Peng Shou ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HUAIBEI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SAPPHIRE; SILICON CARBIDE; SUBSTRATES; X RAY ABSORPTION; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY;

CARBON ATOMS; DOMAIN SIZE; FEW-LAYER GRAPHENE; GRAPHENE LAYERS; LAYER NUMBER; MOLECULAR-BEAM EPITAXY; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURES; REFLECTION HIGH ENERGY DIFFRACTION; SAPPHIRE SUBSTRATES; SUBSTRATES TEMPERATURE;

GRAPHENE;

EID: 82055190788     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/11/118101     Document Type: Article

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