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Volumn 99, Issue 20, 2011, Pages

Spin transfer torque switching assisted by thermally induced anisotropy reorientation in perpendicular magnetic tunnel junctions

(10) Bandiera, S a Sousa, R C a Marins De Castro, M a Ducruet, C b Portemont, C b Auffret, S a Vila, L a Prejbeanu, I L b Rodmacq, B a Dieny, B a

a CEA GRENOBLE (France)

b CROCUS Technology (France)

Author keywords

[No Author keywords available]

Indexed keywords

FREE LAYERS; IN-PLANE; JUNCTION TEMPERATURES; MAGNETIC REORIENTATION; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE RANDOM ACCESS MEMORIES; OUT-OF-PLANE; PERPENDICULAR ANISOTROPY; SPIN TRANSFER SWITCHING; SPIN TRANSFER TORQUE; THERMALLY INDUCED; TUNNEL BARRIER; WRITE EFFICIENCY;

MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETIZATION; MRAM DEVICES; RANDOM ACCESS STORAGE;

TUNNEL JUNCTIONS;

EID: 81855187177 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3662971 Document Type: Article

Times cited : (39)

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